在Advanced Functional Materials, Journal of semiconductor, phys. status solidi (RRL), Applied Physics Letters, Superlattices Microstruct.等期刊发表SCI论文20余篇(一作6篇，1篇封面)。
代表性成果
S. Liu, Y. Yuan*, L. Huang, J. Zhang, T. Wang, T. Li, J. Kang, L. Luo, Z. Chen, X. Sun, and X. Wang*, Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation, Adv. Funct. Mater. 2112111 (2022).
S. Liu, W. Luo, D. Li, Y. Yuan, W. Tong, J. Kang, Y. Wang, D. Li, X. Rong, T. Wang, Z. Chen, Y. Li, H. Wang, W. Wang, J. Hoo, L. Yan, S. Guo, B. Shen, Z. Cong*, and X. Wang*. Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source, Adv. Funct. Mater. 2008452(2021).
S. Liu, Y. Yuan*, S. Sheng, T. Wang, J. Zhang, L. Huang, X. Zhang, J. Kang, W. Luo, Y. Li, H. Wang, W. Wang, C. Xiao, Y. Liu, Q. Wang, and X. Wang*, Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. Journal of Semiconductors, 122804(2021).
S. Liu, J. Hoo, Z. Chen, L. Yan, T. Wang, S. Sheng, X. Sun, Y. Yuan, S. Guo, and X. Wang*, Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications. physica status solidi (RRL), 2100363(2021).
S. Liu, BP. Ratiu, H. Jia, Z. Yan, K.M. Wong, M. Martin, M. Tang, T. Baron, H. Liu, Q. Li*, Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon, Applied Physics Letters, 125.8 (2024).
